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PE106

SILICON CARBIDE EPITAXIAL REACTOR PE1O6



PE106 GENERAL DESCRIPTION
- Single wafer 150mm epitaxy reactor
- Hot wall inductive heating
- Three-zone gas injection system
- Load lock for inert purge between runs
- Smallest footprint

UNMATCHED PROCESS FLEXIBILITY
- Thin , thick and super thick epitaxial layers
- Multilayer (p and n) in one run
- Reduced pressure process capability

THROUGHPUT
- Hi – temperature robotized handling
- Industry’s shortest heat up / cool down
- Growth rate: up to 90 µm/h
- Lowest CoO

For std 6 micron layer : 1.000 wafers / month
( peak value )

PERFORMANCE
- Thickness uniformity (s/mean) : 0.5% - 1.5%
- Doping uniformity (s/mean) : 1.5% - 5%
- Defect density : < 0,5 / cm2




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